bar 60, bar 61 oct-05-1999 1 silicon pin diodes ? rf switch, rf attenuator for frequencies above 10 mhz vps05178 2 1 3 4 bar 60 bar 61 eha07013 4 1 3 2 eha07014 31 2 4 type marking pin configuration package bar 60 bar 61 60s 61s 1=c1/a2/c3 1=c2/c3 2 = c2 2 = a1 3 = a3 3=a2/c1 4 = a1 4 = a3 sot-143 sot-143 maximum ratings parameter symbol value unit diode reverse voltage v r 100 v forward current i f 140 ma total power dissipation , t s 65c p tot 250 mw junction temperature t j 150 c operating temperature range t op -55... 150 storage temperature t st g -55 ... 150 thermal resistance junction - ambient 1) r thja 580 k/w junction - soldering point r thjs 340 1) package mounted on alumina 15mm x 16.7mm x 0.7mm
bar 60, bar 61 oct-05-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 50 v i r - - 100 na reverse current v r = 100 v i r - - 1 a forward voltage i f = 100 ma v f - - 1.25 v ac characteristics diode capacitance v r = 0 v, f = 100 mhz v r = 50 v, f = 1 mhz c t - - 0.2 0.25 - 0.5 pf forward resistance i f = 0.01 ma, f = 100 mhz i f = 0.1 ma, f = 100 mhz i f = 1 ma, f = 100 mhz i f = 10 ma, f = 100 mhz r f - - - - 2800 380 45 7 - - - - ? zero bias conductance v r = 0 v, f = 100 mhz g p - 50 - s charge carrier life time i f = 10 ma, i r = 6 ma, i r = 3 ma rr - 1 - s
bar 60, bar 61 oct-05-1999 3 forward current i f = f ( v f ) t a = 25c 0.0 10 ehd07069 bar 60/61 f f v -2 -1 10 0 10 1 10 10 2 ma -40 ?c t a = 25 150 85 0.5 1.0 v 1.5 ?c ?c ?c forward current i f = f ( t a *; t s) * package mounted on alumina 0? c 0 ehd07072 bar 60/61 f a t ; t s 50 100 150 20 40 60 80 100 120 140 160 ma 200 t a s t forward resistance r f = f ( i f ) f = 100mhz 10 ehd07070 bar 60/61 r f f -2 2 10 ma 0 10 ? 10 4 10 1 10 2 10 3 -1 10 0 10 1 10 diode capacitance c t = f ( v r ) f = parameter 0 0.0 ehd07071 bar 60/61 c t r v 0.5 pf 1.0 f = 1 = 100 f mhz mhz 10 20 30 40 v 50
bar 60, bar 61 oct-05-1999 4 application circuit for attenuation networks with diode BAR60 input ehm07025 +12 v output bar 60 ? 1 nf 1 nf 1 nf 1 nf 1 k 1 k ? ? 1 k 5.6 k ?? 4.7 k 1 nf 50 k ? application circuit for attenuation networks with diode bar61 ehm07026 bar 61 bc 238 v reg. +12 v output input 1 nf ? 1 k ? 1 k 1 nf 50 k ? 1 nf 1 nf 1 nf ? 5.6 k 4.7 k ? 1 nf ? 12 k 1 nf 1 nf ? 1.8 k 2.2 k ?
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